S8550 is an apd (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capa citance. S8550 also offers uniform gain and small cross-talk between each element. features l high sensitivity and low noise in short wavelength region l low terminal capacitance l optimized for blue light detection l uniform gain and low cross-talk variation between each element applications l low-light-level photometry in the visible range l detector systems combined with scintillator apd si apd array 4 8 element apd array with low noise and enhanced short-wavelength sensitivity S8550 general ratings parameter rating unit element size 1.6 1.6 ( 32 elements) mm element pitch 2.3 mm package ceramic - window material epoxy resin - absolute maximum ratings parameter symbol value unit operating temperature topr -20 to +60 c storage temperature tstg -20 to +80 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1000 - nm peak sensitivity wavelength p m=50 - 600 - nm quantum efficiency qe =420 nm 60 70 - % breakdown voltage v br - 400 500 v dark current i d per 1 element, m=50 - 10 50 na terminal capacitance ct per 1 element, m=50, f=10 khz - 10 - pf gain m - 50 - - 1
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photonics k.k. si apd array S8550 cat. no. kapd1009e02 jun. 2006 dn h4 h3 h2 h1 g4 g3 g2 g1 f4 f3 f2 f1 e4 e3 e2 e1 d4 d3 d2 d1 c4 c3 c2 c1 b4 b3 b2 b1 a4 a3 a2 a1 1.27 1.00 (0.5) 15.24 2.6 0.9 19.50 2.30 15.24 1.27 2.30 11.20 1.27 7.62 2.60 2.30 13 12 11 10 987654321 a d e f c b index mark array 1 photosensitive surface active area 1.6 1.6 (anode) cathode 1: cathode of array 1 cathode 2: cathode of array 2 pin no. element no. pin no. element no. pin no. element no. pin no. element no. 1a 3a 5a 7a 9a 11a 13a 2b 4b cathode 1 b1 c2 d2 e2 g1 h1 a2 c1 6b 8b 10b 12b 1c 3c 11c 13c 1d d1 e1 f1 g2 a1 b2 f2 h2 a3 3d 11d 13d 2e 4e 6e 8e 10e 12e c3 g3 h4 b3 c4 d4 e4 f4 h3 1f 3f 5f 7f 9f 11f 13f a4 b4 d3 e3 f3 g4 cathode 2 array 2 0.45 200 400 600 800 1000 1200 0 40 20 60 80 100 wavelength (nm) quantum efficiency (%) (typ. ta=25 ?c) quantum efficiency vs. wavelength kapdb0059ea gain vs. reverse voltage kapdb0063ea dimensional outline (unit: mm) kapda0023eb reverse voltage (v) gain 100 0 1 10 1000 (typ. ta=25 ? c, =420 nm) 100 200 300 400 2
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